Slip generation during rapid thermal processing

@inproceedings{Zllner1996SlipGD,
  title={Slip generation during rapid thermal processing},
  author={Jens-Peter Z{\"o}llner and Guenther Eichhorn and Volker Cimalla and J. Bozmarov and Peter Zaumseil and H. K{\"u}rschner},
  year={1996}
}
The generation of slip in 100 mm (100) silicon wafers during rapid thermal oxidation is investigated in dependence on process temperature, process duration, and heating rate. The processes were carried out in a scalar controlled RTP equipment with three-zone rotation-symmetrical illumination. The wafer temperature was measured in three points (centre, edge, half distance between both) by thermopiles during the whole process. In addition, the oxidation temperature was monitored. X-ray topography… CONTINUE READING