Size Dependent Thermal Activation Study of Single InSb Nanowire Devices for High Speed and Low Power Digital Logic Applications

Abstract

InSb nanowire devices at different diameter range from 30 nm-200 nm using electrochemical deposition technique is demonstrated. Electrical properties of nanowires is investigated at different diameters for beyond CMOS applications with high speed and low power characteristics. In particular, InSb nanowire based FET devices is fabricated on Si substrate and… (More)

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