Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

  title={Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories},
  author={Daniele Ielmini and Federico Nardi and Carlo Cagli and A. L. Lacaita},
  journal={IEEE Electron Device Letters},
NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (programming) current and the reliability at high temperature. This letter studies temperature-accelerated data retention in RRAM cells from both experimental and… CONTINUE READING