Corpus ID: 237563068

Site-dependent properties of quantum emitters in nanostructured silicon carbide

@inproceedings{Joshi2021SitedependentPO,
  title={Site-dependent properties of quantum emitters in nanostructured silicon carbide},
  author={Tamanna Joshi and Pratibha Dev},
  year={2021}
}
Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated nanostructures that modify defect properties due to surface and quantum confinement effects. Thus far, theoretical studies exploring deep defects in SiC have ignored these effects. Using density functional theory, this work demonstrates site-dependence of… Expand

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