Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy

@article{Ishikawa1998SiteCO,
  title={Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy},
  author={T. Ishikawa and S. Kohmoto and K. Asakawa},
  journal={Applied Physics Letters},
  year={1998},
  volume={73},
  pages={1712-1714}
}
We studied a site-control method for self-organized InAs quantum dots on GaAs substrates by a combination of in situ electron-beam (EB) lithography and molecular-beam epitaxy (MBE) using an ultrahigh-vacuum multichamber system. Small and shallow holes were patterned on a MBE-grown GaAs (001) surface by in situ EB writing and Cl2-gas etching. When more than a 1.4 monolayer of InAs was applied to the patterned surface, In(Ga)As dots were preferentially self-organized in the holes while dot… Expand
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