Single photon detector fabricated in a complementary metal-oxide-semiconductor high-voltage technology

  title={Single photon detector fabricated in a complementary metal-oxide-semiconductor high-voltage technology},
  author={Alexis Rochas and Muzafar Gani and B. Furrer and Pierre-Andr{\'e} Besse and Radivoje S. Popovic and Gregoire Ribordy and Nicolas Gisin},
  journal={Review of Scientific Instruments},
In this article, a fully integrated single photon detector including a silicon avalanche photodiode and a quenching circuit is presented. The low doping concentrations, inherent to the complementary metal–oxide–semiconductor (CMOS) high-voltage technology used, favor the absorption of red and infrared photons at the depletion region. The detection probability rapidly increases with excess bias voltages up to 5 V. At this value, the detection probability is larger than 20% between 420 nm and 620… 

A New Single Photon Avalanche Diode in CMOS High-Voltage Technology

  • Z. XiaoD. PanticR. Popovic
  • Physics
    TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference
  • 2007
We report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n-

A Single Photon Avalanche Diode Implemented in 130-nm CMOS Technology

We report on the first implementation of a single photon avalanche diode (SPAD) in 130 nm complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is fabricated as p+/n-well junction with

A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device.

The first implementation of a single-photon avalanche diode in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology is reported, which exhibits a timing response without exponential tail and provides a remarkable timing jitter of 65 ps (FWHM).

Measurements and Simulations of Low Dark Count Rate Single Photon Avalanche Diode Device in a Low Voltage 180-nm CMOS Image Sensor Technology

This paper presents the key features of single photon avalanche diode (SPAD) devices fabricated in a low voltage commercial 180-nm CMOS image sensor technology exhibiting very low dark count rate

Single photon detection using Geiger mode CMOS avalanche photodiodes

Geiger mode Avalanche Photodiodes fabricated using complementary metal-oxide-semiconductor (CMOS) fabrication technology combine high sensitivity detectors with pixel-level auxiliary circuitry.

Progress in Silicon Single-Photon Avalanche Diodes

Silicon single-photon avalanche diodes (SPADs) are nowadays a solid-state alternative to photomultiplier tubes (PMTs) in single-photon counting (SPC) and time-correlated single-photon counting

Optimized structure of single photon avalanche diode with low dark count rate

In this paper, an optimized structure of single photon avalanche diode (SPAD) with p-i-n construction is presented, and the device is compatible with standard CMOS technology. TCAD software and

An Infra-Red Sensitive, Low Noise, Single-Photon Avalanche Diode in 90nm CMOS

— A Single-Photon Avalanche Diode (SPAD) is reported in 90nm CMOS imaging technology with a peak photon detection efficiency (PDE) of ≈ 44% at 690nm and better than ≈ 20% at 850nm. This represents an

CMOS solid state photomultipliers for ultra-low light levels

Detection of single photons is crucial for a number of applications. Geiger photodiodes (GPD) provide large gains with an insignificant amount of multiplication noise exclusively from the diode. When



Avalanche photodiodes and quenching circuits for single-photon detection.

Avalanche photodiodes, which operate above the breakdown voltage in Geiger mode connected with avalanche-quenching circuits, can be used to detect single photons and are therefore called singlephoton

Low-noise silicon avalanche photodiodes fabricated in conventional CMOS technologies

We present a simple design technique that allows the fabrication of UV/blue-selective avalanche photodiodes in a conventional CMOS process. The photodiodes are fabricated in a twin tub 0.8 /spl mu/m

20-ps timing resolution with single-photon avalanche diodes

Single photon avalanche diodes (SPADs) are avalanche photodiodes specifically designed for reverse bias operation above the breakdown voltage and used for detecting single optical photons. A new

Triggering phenomena in avalanche diodes

The operation of a small area p-n junction diode above the breakdown voltage is analyzed. A new formulation in terms of ionization probability is used to derive the rate of turn-on of current in such

High Voltage Devices and Circuits in Standard CMOS Technologies

Standard voltages used in today's ICs may vary from about 1.3V to more than 100V, depending on the technology and the application. High voltage is therefore a relative notion. High Voltage Devices

Parallel fluorescence detection of single biomolecules in microarrays by a diffractive-optical-designed 2 x 2 fan-out element.

Results of parallel excitation and detection of single tetramethylrhodamine biomolecules in a high-density microarray of circular wells show single-biomolecule sensitivity in all four foci simultaneously.

Techniques for single molecule sequencing

A method is described that demonstrates a new technique for rapid and high-throughput single molecule sequencing. This sequencing technique is based on the successive enzymatic degradation of