Single photon detector fabricated in a complementary metal-oxide-semiconductor high-voltage technology

@article{Rochas2003SinglePD,
  title={Single photon detector fabricated in a complementary metal-oxide-semiconductor high-voltage technology},
  author={Alexis Rochas and Muzafar Gani and B. Furrer and Pierre-Andr{\'e} Besse and Radivoje S. Popovic and Gregoire Ribordy and Nicolas Gisin},
  journal={Review of Scientific Instruments},
  year={2003},
  volume={74},
  pages={3263-3270}
}
In this article, a fully integrated single photon detector including a silicon avalanche photodiode and a quenching circuit is presented. The low doping concentrations, inherent to the complementary metal–oxide–semiconductor (CMOS) high-voltage technology used, favor the absorption of red and infrared photons at the depletion region. The detection probability rapidly increases with excess bias voltages up to 5 V. At this value, the detection probability is larger than 20% between 420 nm and 620… 

A New Single Photon Avalanche Diode in CMOS High-Voltage Technology

  • Z. XiaoD. PanticR. Popovic
  • Physics
    TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference
  • 2007
We report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n-

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We report on the first implementation of a single photon avalanche diode (SPAD) in 130 nm complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is fabricated as p+/n-well junction with

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— A Single-Photon Avalanche Diode (SPAD) is reported in 90nm CMOS imaging technology with a peak photon detection efficiency (PDE) of ≈ 44% at 690nm and better than ≈ 20% at 850nm. This represents an

CMOS solid state photomultipliers for ultra-low light levels

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