Single-nanowire solar cells beyond the Shockley-Queisser limit

  title={Single-nanowire solar cells beyond the Shockley-Queisser limit},
  author={Peter Krogstrup and Henrik Ingerslev Jorgensen and Martin Heiss and Olivier Demichel and Jeppe V. Holm and Martin Aagesen and Jesper Nyg{\aa}rd and Anna Fontcuberta i Morral},
  journal={Nature Photonics},
Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p–n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley–Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core–shell p–i–n junction GaAs nanowire solar cell grown on a silicon substrate. At 1 sun illumination, a short-circuit current of 180 mA cm –2 is… 

Shockley-Queisser Detailed Balance Efficiency Limit for Nanowire Solar Cells

III-V semiconductor nanowire arrays show promise as a platform for next-generation solar cells. However, the theoretical efficiency limit for converting the energy of sunlight into electrical energy

Performance-limiting factors for GaAs-based single nanowire photovoltaics.

Overall, the ultimate efficiency of the GaAs nanowire solar cell with radial and vertical junction is not expected to exceed that of the thin-film design, with both staying below the Shockley-Queisser limit.

Performance-limiting factors for GaAs-based single nanowire photovoltaics.

Overall, the ultimate efficiency of the GaAs nanowire solar cell with radial and vertical junction is not expected to exceed that of the thin-film design, with both staying below the Shockley-Queisser limit.

Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage

Present day nanowire solar cells have reached an efficiency of 17.8%. Nanophotonic engineering by nanowire tapering allows for high solar light absorption. In combination with sufficiently high

Extraction of p-n junction properties and series resistance in GaAs nanowire-based solar cells using light concentration

This analysis method provides a platform to distinguish the intrinsic response of the nanowire p-n junction from the series resistance effects, and provides a means of optimizing the efficiency in next generation solar cells, where contacts still have to be developed.

The generalized Shockley-Queisser limit for nanostructured solar cells

It is shown that single-junction nanostructured solar cells have a theoretical maximum efficiency of ∼42% under AM 1.5 solar illumination, and it is concluded that nanostructure solar cells offer an important route towards higher efficiency photovoltaic devices through a built-in optical concentration.

Excellent light-capture capability of trilobal SiNW for ultra-high JSC in single-nanowire solar cells

Single-nanowire solar cells with a unique light-concentration property are expected to exceed the Shockley–Queisser limit. The architecture of single nanowire is an important factor to regulate its

Single-Nanowire Solar Cells

Author(s): Brittman, Sarah Faye | Advisor(s): Yang, Peidong | Abstract: The two tasks performed by a solar cell are absorption of sunlight and collection of the photogenerated charges. In a

Design for strong absorption in a nanowire array tandem solar cell

This work optimize through optical modeling the absorption in a dual-junction nanowire-array solar cell in terms of the Shockley-Quessier detailed balance efficiency limit, and identifies efficiency maxima that originate from resonant absorption of photons through the HE11 and the HE12 waveguide modes in the top cell.

Semiconductor Nanowires for Next Generation Solar Cells

  • A. F. Morral
  • Physics, Chemistry
    2014 IEEE Photonics Society Summer Topical Meeting Series
  • 2014
Nanowires are filamentary crystals with a tailored diameter in the submicron range. This particular morphology has improved existing and inspired many novel applications such as biosensors, high



Semiconductor nanowire optical antenna solar absorbers.

It is proposed that by patterning the silicon layer in a thin film PV cell into an array of NWs, one can boost the absorption for solar radiation by 25% while utilizing less than half of the semiconductor material (250% increase in the light absorption per unit volume of material).

Solar Cell light trapping beyond the ray optic limit.

It is shown that it is always possible to exceed the ray optic light trapping limit and principles are used to design a number of new solar absorbers with the key feature of having an elevated LDOS within the absorbing region of the device, opening new avenues for solar cell design and cost reduction.

InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

It is reported that arrays of p-i-n InP nanowires (that switch from positive to negative doping), grown to millimeter lengths, can be optimized by varying the nanowire diameter and length of the n-doped segment, which are comparable to the best planar InP photovoltaics.

Patterned radial GaAs nanopillar solar cells.

Dense, large-area, lithographically defined vertical arrays of nanowires with uniform spacing and dimensions allow for power conversion efficiencies for this material system of 2.54% (AM 1.5 G) and high rectification ratio of 213 (at ±1 V).

Fundamental limits in the external quantum efficiency of single nanowire solar cells

The fundamental limits for the measurement of the efficiency of single nanowire solar cell devices are presented. We evaluate the effect of the substrate, light polarization, and existence of Mie

Nanowire dye-sensitized solar cells

This work introduces a version of the dye-sensitized cell in which the traditional nanoparticle film is replaced by a dense array of oriented, crystalline ZnO nanowires, which features a surface area up to one-fifth as large as a nanoparticle cell.

Engineering light absorption in semiconductor nanowire devices.

It is shown that leaky-mode resonances, which can gently confine light within subwavelength, high-refractive-index semiconductor nanostructures, are ideally suited to enhance and spectrally engineer light absorption in this important size regime.

Single and tandem axial p-i-n nanowire photovoltaic devices.

Current-voltage characteristics reveal clear and reproducible diode characteristics for the p-i-n and p-n SiNW devices and a novel single SiNW tandem solar cell consisting of synthetic integration of two photovoltaic elements with an overall p- i-n(+) -p(+)-i-N structure was prepared and shown to exhibit a Voc that is on average 57% larger than that of the single p-o-n device.

Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells

A device physics model has been developed for radial p-n junction nanorod solar cells, in which densely packed nanorods, each having a p-n junction in the radial direction, are oriented with the rod

Coaxial silicon nanowires as solar cells and nanoelectronic power sources

These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.