Single-grain Si TFTs and circuits for flexible electronics and 3D-ICs

@article{Ishihara2006SinglegrainST,
  title={Single-grain Si TFTs and circuits for flexible electronics and 3D-ICs},
  author={Ryoichi Ishihara and Vikas Rana and Ming He and Wim Metselaar and Kees Beenakker},
  journal={2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings},
  year={2006},
  pages={174-177}
}
Thin film transistors (TFTs) were fabricated inside a location-controlled, large Si grains through an advanced excimer-laser crystallization with a low temperature process. The field-effect mobility for electrons of the single-grain Si TFTs was as high as 597 cm 2/Vs. CMOS inverters are fabricated inside the location-controlled grain. Propagation delay per… CONTINUE READING