Single-event-upset and alpha-particle emission rate measurement techniques

  title={Single-event-upset and alpha-particle emission rate measurement techniques},
  author={M. Gordon and K. Rodbell and D. Heidel and C. Cabral and E. Cannon and D. D. Reinhardt},
  journal={IBM J. Res. Dev.},
The susceptibility of modern integrated-circuit devices to single-event upsets (SEUs) depends on both the alpha-particle emission rate and the energy of the alpha-particles emitted. In addition, the terrestrial neutron energy and flux, which produce secondary charged fragments in the device and circuit at the location of operation, contribute to the SEU rate. In this paper, we discuss methods that are used to measure alpha-particle emissivity from semiconductor and packaging materials, as well… Expand
Incorporation of Secondary-Ion Information and TCAD Simulation for Atmospheric Neutron Soft-Error-Rate Prediction in SRAMs
Neutron-induced secondary ions and their contribution to a single-event upset (SEU) in SRAM are investigated by Geant4 and TCAD simulations. It proves that the maximum linear energy transfer (LET)Expand
Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM
Experimental results are presented on proton induced single-event-upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results are very different for the 65 nm SRAM asExpand
Real-time soft error rate measurements on bulk 40 nm SRAM memories: a five-year dual-site experiment
This paper reports five years of real-time soft error rate experimentation conducted with the same setup at mountain altitude for three years and then at sea level for two years. More than 7 Gbit ofExpand
SEMM-2: A new generation of single-event-effect modeling tools
The IBM soft-error Monte Carlo model SEMM-2 is a new general-purpose simulation platform developed for single-event-effect (SEE) analysis of advanced CMOS (complementary metal-oxide semiconductor)Expand
Real-time soft-error rate measurements: A review
This review gives a survey over recent real-time SER experiments, conducted in altitude and/or underground, and investigating modern CMOS logic technologies, down to the 40 nm technological node. Expand
An Evaluation of An Ultralow Background Alpha-Particle Detector
XIA has provided IBM with a prototype ultralow background alpha particle counter for evaluation. Results show a significant decrease in background compared to other commercial counters allowing forExpand
Estudo sobre distribuição de cargas em semicondutores sujeitos a radiação ionizante
The effect of ionizing radiation on electronic devices is a growing concern in semiconductor technology, especially due to the continuous reduction of the devices and even greater when they areExpand
Recent Single Event Effects Compendium of Candidate Electronics for NASA Space Systems
We present the results of single event effects (SEE) testing and investigating the effects of space radiation on electronics. This paper is a summary of test results.
Backside Alpha-Irradiation Test in Flip-Chip Package in EUV 7 nm FinFET SRAM
The results of backside- and front-side-tests show the dependability of the proposed method of alpha-irradiation test in flip-chip packages, backside irradiationTest in EUV 7nm FinFET SRAM. Expand
SOI FinFET soft error upset susceptibility and analysis
Improvement in the soft error upset cross section for SOI FinFET SRAMs is shown to be due to the better electrostatic control of the channel in the FinFet. Expand


Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground
New ground-based measurements of the cosmic-ray induced neutron flux and its energy distribution have been made at several locations across the United States using an extended-energy Bonner sphereExpand
Single-Event-Upset Critical Charge Measurements and Modeling of 65 nm Silicon-on-Insulator Latches and Memory Cells
Experimental and modeling results are presented on the critical charge required to upset exploratory 65 nm silicon-on-insulator (SOI) circuits. Using a mono-energetic, collimated, beam of particlesExpand
SEMM-2: a modeling system for single event upset analysis
We describe SEMM-2, a new simulation system for the analysis of radiation-induced single event upsets which builds on the initial SEMM tool. Developed for the current and future CMOS technologies,Expand
Importance of BEOL Modeling in Single Event Effect Analysis
Novel techniques have been developed to simulate particle transport in arbitrarily complex back-end-of-line topologies. They are shown to be critical for single event effect analyses of new deviceExpand
SEMM-2: A new generation of single-event-effect modeling tools
The IBM soft-error Monte Carlo model SEMM-2 is a new general-purpose simulation platform developed for single-event-effect (SEE) analysis of advanced CMOS (complementary metal-oxide semiconductor)Expand
New simulation methodology for effects of radiation in semiconductor chip structures
The basic concepts of this development of new modeling methodologies to simulate particle transport in arbitrarily complex back-end-of-line (BEOL) topologies of a semiconductor chip are reviewed and some important applications are discussed. Expand
Terrestrial cosmic rays
  • J. Ziegler
  • Physics, Computer Science
  • IBM J. Res. Dev.
  • 1996
The terrestrial flux of nucleons can be attenuated by shielding, making a significant reduction in the electronic system soft-error rate, and estimates of such attenuation are made. Expand
Soft errors in advanced semiconductor devices-part I: the three radiation sources
In this review paper, we summarize the key distinguishing characteristics and sources of the three primary radiation mechanisms responsible for inducing soft errors in semiconductor devices andExpand
IBM experiments in soft fails in computer electronics (1978-1994)
The experimental work at IBM over the last fifteen years in evaluating the effect of cosmic rays on terrestrial electronic components became a significant factor in IBM`s efforts toward improved product reliability. Expand
Circuit design and modeling for soft errors
As semiconductor devices decrease in size, soft errors are becoming a major issue that must be addressed at all stages of product definition, and circuit models are designed and modeled as needed. Expand