Single event effects resulted by parasitic structures of MOS transistors in SOI CMOS ICs and their hardness

Abstract

The paper describes the parasitic structures of MOS transistors in SOI CMOS ICs at first. Then the influences of the parasitic structures on single particles radiation effect of MOS transistors in SOI CMOS ICs are presented. Finally the hardness methods of single event effects resulted by the parasitic structures of MOS transistors are given and the… (More)

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