Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm

Abstract

Although single dopant signatures have been observed at low temperature [1–2], the impact on transistor performance of a single dopant atom at room temperature is not yet well understood. Here, for the first time, we provide an in-depth understanding of single dopant influence on NMOSFETs characteristics by linking low and room temperature transport. We… (More)

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