Single crystals of germanium and silicon—Basic to the transistor and integrated circuit

@article{Teal1976SingleCO,
  title={Single crystals of germanium and silicon\&\#8212;Basic to the transistor and integrated circuit},
  author={G. Teal},
  journal={IEEE Transactions on Electron Devices},
  year={1976},
  volume={23},
  pages={621-639}
}
  • G. Teal
  • Published 1976
  • Physics
  • IEEE Transactions on Electron Devices
HEN the transistor was discovered at Bell Laboratories there were few even within the Labs who knew about it for some months due to a decision of management to maintain close security for a period. John Bardeen and Walter Brattain [l], [2] made their earthshaki:ng observations on December 23,1947; the first public demo’nstration of the invention and announcement of the discovery was not made until June 30,1948. In the interim period only those who were assigned to the project by research… Expand
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References

SHOWING 1-10 OF 34 REFERENCES
History of Semiconductor Research
This paper presents a running story of semiconductor research from its earliest beginnings up to the present day, with special emphasis on the inception of new ideas and the resolution of olderExpand
Present Status of Transistor Development
The invention of the transistor provided a simple, apparently rugged device that could amplify-an ability which the vacuum tube had long monopolized. As with most new electron devices, however, aExpand
Single-Crystal Germanium
Significant advances have been made in the development of new types of transistors, photocells, and rectifiers and in the improvement of the reproducibility and reliability of the point-contactExpand
The Mobility and Life of Injected Holes and Electrons in Germanium
AS a result of new experimental techniques 1 developed in connection with the transistor2 program, the speed with which holes and electrons drift in electric fields in germanium can now be measuredExpand
p − n Junction Transistors
The effects of diffusion of electrons through a thin p -type layer of germanium have been studied in specimens consisting of two n -type regions with the p -type region interposed. It is found thatExpand
Contributions of Materials Technology to Semiconductor Devices
  • R. Petritz
  • Materials Science
  • Proceedings of the IRE
  • 1962
Two basic disciplines underlying the design and development of solid-state electronic devices are: 1) the design and analysis of the device from the electron physics standpoint, and 2) the materialsExpand
Techniques of Zone Melting and Crystal Growing
Publisher Summary This chapter discusses several techniques of zone melting and crystal growing. The field of application of zone melting may be described as the field of controlled solidification orExpand
Hole injection in germanium - Quantitative studies and filamentary transistors
TLDR
Holes injected by an emitter point into thin single-crystal filaments of germanium can be detected by collector points and the drift velocity and lifetimes can be directly observed and the mobility measured. Expand
The theory of p-n junctions in semiconductors and p-n junction transistors
  • W. Shockley
  • Materials Science, Computer Science
  • Bell Syst. Tech. J.
  • 1949
TLDR
The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium, resulting in an admittance for a simple case varying as (1 + iωτ p )1/2 where τ p is the lifetime of a hole in the n-region. Expand
The Drift Mobility of Electrons in Silicon
We have made similar calculations for the lateral spread of high energy nucleons in lead and Gnd, for example, that under a block of 56-cm thickness the root-mean-square distance from the shower axisExpand
...
1
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...