Single atom impurity in a single molecular transistor

  title={Single atom impurity in a single molecular transistor},
  author={Soumya Jyoti Ray},
  journal={Journal of Applied Physics},
  • S. Ray
  • Published 1 June 2014
  • Physics
  • Journal of Applied Physics
The influence of an impurity atom on the electrostatic behaviour of a Single Molecular Transistor was investigated through Ab-initio calculations in a double-gated geometry. The charge stability diagram carries unique signature of the position of the impurity atom in such devices which together with the charging energy of the molecule could be utilised as an electronic fingerprint for the detection of such impurity states in a nano-electronic device. The two gated geometry allows additional… Expand
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