Single and tandem axial p-i-n nanowire photovoltaic devices.

@article{Kempa2008SingleAT,
  title={Single and tandem axial p-i-n nanowire photovoltaic devices.},
  author={Thomas J Kempa and Bozhi Tian and Dong Rip Kim and Jinsong Hu and Xiaolin Zheng and Charles M. Lieber},
  journal={Nano letters},
  year={2008},
  volume={8 10},
  pages={3456-60}
}
Nanowires represent a promising class of materials for exploring new concepts in solar energy conversion. Here we report the first experimental realization of axial modulation-doped p-i-n and tandem p-i-n(+) -p(+)-i-n silicon nanowire (SiNW) photovoltaic elements. Scanning electron microscopy images of selectively etched nanowires demonstrate excellent synthetic control over doping and lengths of distinct regions in the diode structures. Current-voltage (I-V) characteristics reveal clear and… CONTINUE READING
Highly Cited
This paper has 84 citations. REVIEW CITATIONS
56 Citations
1 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 56 extracted citations

85 Citations

01020'10'12'14'16'18
Citations per Year
Semantic Scholar estimates that this publication has 85 citations based on the available data.

See our FAQ for additional information.

References

Publications referenced by this paper.

The carrier gas was H2 (60 sccm). Under these conditions and NW diameter in the range of 200-250 nm, the growth rate is ∼1 μm/min. The dopant feed-in ratios (Si-B/P

  • NW axial
  • 2000

Similar Papers

Loading similar papers…