Single and tandem axial p-i-n nanowire photovoltaic devices.

  title={Single and tandem axial p-i-n nanowire photovoltaic devices.},
  author={Thomas J Kempa and Bozhi Tian and Dong Rip Kim and Jinsong Hu and Xiaolin Zheng and Charles M. Lieber},
  journal={Nano letters},
  volume={8 10},
Nanowires represent a promising class of materials for exploring new concepts in solar energy conversion. Here we report the first experimental realization of axial modulation-doped p-i-n and tandem p-i-n(+) -p(+)-i-n silicon nanowire (SiNW) photovoltaic elements. Scanning electron microscopy images of selectively etched nanowires demonstrate excellent synthetic control over doping and lengths of distinct regions in the diode structures. Current-voltage (I-V) characteristics reveal clear and… CONTINUE READING
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The carrier gas was H2 (60 sccm). Under these conditions and NW diameter in the range of 200-250 nm, the growth rate is ∼1 μm/min. The dopant feed-in ratios (Si-B/P

  • NW axial
  • 2000

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