Single Sided P + N and Double Sided Silicon Strip Detectors Exposed to Uences up to 210 14 /cm 2 24gev Protons

Abstract

Single sided p + n and double sided detectors have been designed for surviving the drastic changes of material properties expected from their use in the harsh radiation environment at the LHC. Detectors optimized for capacitive charge division readout have been exposed to a uence of 210 14 /cm 2 24 GeV protons. Their principal design characteristics and… (More)

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