Single-Event Upset (SEU) Results of Embedded Error Detect and Correct Enabled Block Random Access Memory (Block RAM) Within the Xilinx XQR5VFX130

Abstract

Recent heavy ion measurements of the single-event upset (SEU) cross section for 65 nm embedded block random access memory (Block RAM) are presented. Results of initial investigation into the on-chip Error Detection and Correction (EDAC) are also discussed. 

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