Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy Ion Irradiation

@article{Lee2014SingleEventCO,
  title={Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy Ion Irradiation},
  author={David S. Lee and Michael J. Wirthlin and Gary M. Swift and Anthony C. Le},
  journal={2014 IEEE Radiation Effects Data Workshop (REDW)},
  year={2014},
  pages={1-5}
}
This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM™ memory are provided. This study also describes an unconventional single event latch-up signature observed during testing. 
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