Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT


We demonstrate a single-chip switch-mode boost converter that features a monolithically integrated lateral field-effect rectifier (L-FER) and a normally off transistor switch. The circuit was fabricated on a standard AlGaN/GaN HEMT epitaxial wafer grown with GaN-on-Si technology. The fabricated rectifier with a drift length of 15 mum exhibits a breakdown… (More)


7 Figures and Tables


Citations per Year

Citation Velocity: 9

Averaging 9 citations per year over the last 3 years.

Learn more about how we calculate this metric in our FAQ.