Simultaneously formed storage node contact and metal contact cell (SSMC) for 1 Gb DRAM and beyond

@article{Lee1996SimultaneouslyFS,
  title={Simultaneously formed storage node contact and metal contact cell (SSMC) for 1 Gb DRAM and beyond},
  author={J. Y. Lee and K N Kim and Y. C. Shin and K. H. Lee and J. S. Kim and D. H. Kim and J. W. Park and J. G. Lee},
  journal={International Electron Devices Meeting. Technical Digest},
  year={1996},
  pages={593-596}
}
Simultaneously formed Storage node contact and Metal contact Cell (SSMC) was investigated and developed with 0.18 /spl mu/m advanced KrF lithography as a promising candidate for the cell structure of 1 Gb DRAM and beyond, such as 4 Gb and 16 Gb DRAMs. SSMC can provide fast and reliable memory cell operation by reducing parasitic resistance between memory cell storage node and access transistor. Also SSMC can reduce the processing steps compared to the conventional COB (Capacitor Over Bit line… CONTINUE READING