Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si.

@article{Neophytou2013SimultaneousII,
  title={Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si.},
  author={Neophytos Neophytou and Xanthippi Zianni and Hans Kosina and Stefano Frabboni and Bruno Lorenzi and Dario Narducci},
  journal={Nanotechnology},
  year={2013},
  volume={24 20},
  pages={
          205402
        }
}
A large thermoelectric power factor in heavily boron-doped p-type nanograined Si with grain sizes ∼30 nm and grain boundary regions of ∼2 nm is reported. The reported power factor is ∼5 times higher than in bulk Si. It originates from the surprising observation that for a specific range of carrier concentrations, the electrical conductivity and Seebeck coefficient increase simultaneously. The two essential ingredients for this observation are nanocrystallinity and extremely high boron doping… 
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