Simultaneous flare level and flare variation minimization with dummification in EUVL

@article{Fang2012SimultaneousFL,
  title={Simultaneous flare level and flare variation minimization with dummification in EUVL},
  author={Shao-Yun Fang and Yao-Wen Chang},
  journal={DAC Design Automation Conference 2012},
  year={2012},
  pages={1175-1180}
}
Extreme Ultraviolet Lithography (EUVL) is one of the most promising Next Generation Lithography (NGL) technologies. Due to the surface roughness of the optical system used in EUVL, the rather high level of flare (i.e., scattered light) becomes one of the most critical issues in EUVL. In addition, the layout density non-uniformity and the flare periphery effect (the flare distribution at the periphery is much different from that in the center of a chip) also induce a large flare variation within… CONTINUE READING

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