Simultaneous flare level and flare variation minimization with dummification in EUVL

  title={Simultaneous flare level and flare variation minimization with dummification in EUVL},
  author={Shao-Yun Fang and Yao-Wen Chang},
  journal={DAC Design Automation Conference 2012},
Extreme Ultraviolet Lithography (EUVL) is one of the most promising Next Generation Lithography (NGL) technologies. Due to the surface roughness of the optical system used in EUVL, the rather high level of flare (i.e., scattered light) becomes one of the most critical issues in EUVL. In addition, the layout density non-uniformity and the flare periphery effect (the flare distribution at the periphery is much different from that in the center of a chip) also induce a large flare variation within… CONTINUE READING


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Publications referenced by this paper.
Showing 1-3 of 3 references

A study of flare variation in extreme ultraviolet lithography for sub-22nm line and space pattern

J. Lee
Jpn. J. Appl. Phys., pp. 06GD09, Jan. 2010. • 2010
View 5 Excerpts
Highly Influenced

US patent 6,625,802: Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography

V. K. Singh
2003. • 2003
View 11 Excerpts
Highly Influenced

Layout compensation for EUV flare

F. Schellenberg
Proc. SPIE 5751, Mar. 2005. • 2005
View 4 Excerpts
Highly Influenced

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