# Simulations of nanowire transistors: atomistic vs. effective mass models

@article{Neophytou2007SimulationsON, title={Simulations of nanowire transistors: atomistic vs. effective mass models}, author={Neophytos Neophytou and Abhijeet Paul and Mark S. Lundstrom and Gerhard Klimeck}, journal={Journal of Computational Electronics}, year={2007}, volume={7}, pages={363-366} }

The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbital sp3d5s* atomistic tight-binding model for the description of the electronic structure, and the top-of-the-barrier semiclassical ballistic model for calculation of the transport properties of the transistors. The dispersion is self consistently computed with a 2D Poisson solution for the electrostatic potential in the cross section of the wire. The effective mass of the nanowire changes…

## 36 Citations

Bandstructure Effects in Silicon Nanowire Electron Transport

- PhysicsIEEE Transactions on Electron Devices
- 2008

Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s* semiempirical…

Robust mode space approach for atomistic modeling of realistically large nanowire transistors

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Nanoelectronic transistors have reached 3D length scales in which the number of atoms is countable. Truly atomistic device representations are needed to capture the essential functionalities of the…

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- Physics
- 2016

We present a formalism to treat quantum electronic transport at the nanometer scale based on empirical pseudopotentials. This formalism offers explicit atomistic wavefunctions and an accurate band…

Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model

- PhysicsJournal of Mathematics in Industry
- 2018

Silicon nanowires (SiNWs) are quasi-one-dimensional structures in which electrons are spatially confined in two directions and they are free to move in the orthogonal direction. The subband…

Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

- PhysicsIEEE Transactions on Electron Devices
- 2011

The influence of interface roughness scattering (IRS) on the performances of silicon nanowire (NW) field-effect transistors is numerically investigated using a full 3-D quantum transport simulator…

Electron states in a silicon nanowire in the presence of surface potential and field.

- PhysicsNanotechnology
- 2012

The results show the effects of the surface potential, the electric field and the transverse dimensions of the nanowire on the electron energies and wavefunctions and it is observed that higher surface potentials can significantly change the energy states due to the increase of volume inversion/accumulation.

A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires

- Physics
- 2009

Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation

- Physics
- 2011

A simulation framework that couples atomistic electronic structures to Boltzmann transport formalism is developed and applied to calculate the transport characteristics of thin silicon nanowires…

Title Efficient simulation and analysis of quantum ballistic transportin nanodevices with

- Physics
- 2012

Quantum–mechanical modeling of ballistic transport in nanodevices usually requires solving the Schrödinger equation at multiple energy points within an energy band. To speed up the simulation and…

Efficient Simulation and Analysis of Quantum Ballistic Transport in Nanodevices With AWE

- PhysicsIEEE Transactions on Electron Devices
- 2012

Quantum-mechanical modeling of ballistic transport in nanodevices usually requires solving the Schrödinger equation at multiple energy points within an energy band. To speed up the simulation and…

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