Simulations of nanowire transistors: atomistic vs. effective mass models

@article{Neophytou2007SimulationsON,
  title={Simulations of nanowire transistors: atomistic vs. effective mass models},
  author={Neophytos Neophytou and Abhijeet Paul and Mark S. Lundstrom and Gerhard Klimeck},
  journal={Journal of Computational Electronics},
  year={2007},
  volume={7},
  pages={363-366}
}
The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbital sp3d5s* atomistic tight-binding model for the description of the electronic structure, and the top-of-the-barrier semiclassical ballistic model for calculation of the transport properties of the transistors. The dispersion is self consistently computed with a 2D Poisson solution for the electrostatic potential in the cross section of the wire. The effective mass of the nanowire changes… 

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