• Corpus ID: 119198553

Simulations of a silicon pixel based on MOS Deep Trapping Gate Principle

@article{Fourches2016SimulationsOA,
  title={Simulations of a silicon pixel based on MOS Deep Trapping Gate Principle},
  author={Nicolas T. Fourches and Wilfried Vervisch},
  journal={arXiv: Instrumentation and Detectors},
  year={2016}
}
The concept of the deep trapping gate device was introduced fairly recently on the basis of technological and transport simulations currently used in the field of classical electron devices. The concept of a buried gate containing localized deep level centers for holes (Deep Trapping Gate or DTG) renders possible the operation of this field effect pixel detector. One alternative to Deep Level introduction is the use of a quantum box, which is a hole quantum-well and an electron barrier. In all… 

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References

SHOWING 1-10 OF 21 REFERENCES

Electrical-modelling, design and simulation of cumulative radiation effects in semiconductor pixels detectors: prospects and limits

Silicon detectors have gained in popularity since silicon became a widely used electronic semiconductor material. Silicon detectors are used in particle physics as well as imagers for pixel based

Device simulation of Monolithic Active Pixel Sensors: Radiation damage effects

  • N. Fourches
  • Materials Science
    2008 IEEE Nuclear Science Symposium Conference Record
  • 2008
Vertexing for the future International Linear Collider represents a challenging goal because of the high spatial resolution required. CMOS Monolithic Active Pixel Sensors (MAPS) represent a good

Impact ionization and positive charge formation in silicon dioxide films on silicon

Positive charge formation and its possible relationship to impact ionization in silicon dioxide have been controversial issues for many years. In this study, band‐gap ionization due to the

Si/SiGe heterostructures: from material and physics to devices and circuits

Silicon germanium (SiGe) has moved from being a research material to accounting for a small but significant percentage of manufactured semiconductor devices. This percentage is predicted to increase

Performance of a fast programmable active pixel sensor chip designed for charged particle detection

We report on the performance of the MIMOSA8 chip. The chip is a 128/spl times/32 pixels array where 8 columns have analog direct outputs and 24 have discriminated outputs. The array is divided in

CMS pixel simulations

The electrical properties of zinc in silicon

Electrically active deep levels related to zinc in silicon are investigated in n- and p-type silicon using Deep-Level Transient Fourier Spectroscopy (DLTFS) measurements. While in n-type silicon a

Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices

Density-gradient theory provides a macroscopic approach to modeling quantum transport that is particularly well adapted to semiconductor device analysis and engineering. After some introductory