• Corpus ID: 119198553

Simulations of a silicon pixel based on MOS Deep Trapping Gate Principle

  title={Simulations of a silicon pixel based on MOS Deep Trapping Gate Principle},
  author={Nicolas T. Fourches and Wilfried Vervisch},
  journal={arXiv: Instrumentation and Detectors},
The concept of the deep trapping gate device was introduced fairly recently on the basis of technological and transport simulations currently used in the field of classical electron devices. The concept of a buried gate containing localized deep level centers for holes (Deep Trapping Gate or DTG) renders possible the operation of this field effect pixel detector. One alternative to Deep Level introduction is the use of a quantum box, which is a hole quantum-well and an electron barrier. In all… 

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