Simulations of Carbon Nanotube Field Effect Transistors

@inproceedings{Sahoo2009SimulationsOC,
  title={Simulations of Carbon Nanotube Field Effect Transistors},
  author={Rasmita Sahoo and R. R. Mishra},
  year={2009}
}
As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. In this paper first we have reviewed carbon nanotube field effect transistor (CNTFET) and types of CNTFET. We have then studied the effect of channel length and chirality on the drain current for planer CNTFET. The Id~Vd curves for planer CNTFETs having different channel lengths and diameters are plotted. For the same, Id~Vd curves for different applied gate voltages… CONTINUE READING
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