Simulation study of the scaling behavior of top-gated carbon nanotube field effect transistors.

Abstract

Device simulations on three-dimensional top-gated carbon nanotube field effect transistors (CNTFETs) have been performed by considering the quantum transport described in the framework of non-equilibrium Green's function method. Device characteristics of various top-gated CNTFETs, such as Schottky-barrier CNTFETs, CNTFETs with doped source and drain, and tunnel-FET-like CNTFETs, have been examined, focusing on their scaling behavior as the channel length is ultimately reduced down to a few nanometers. Comparison with coaxially-gated devices is also made.

Cite this paper

@article{Shin2008SimulationSO, title={Simulation study of the scaling behavior of top-gated carbon nanotube field effect transistors.}, author={Mincheol Shin and Jaehyun Lee and Chiyui Ahn}, journal={Journal of nanoscience and nanotechnology}, year={2008}, volume={8 10}, pages={5389-92} }