Simulation of hydrogenated graphene field-effect transistors through a multiscale approach

@article{Fiori2010SimulationOH,
  title={Simulation of hydrogenated graphene field-effect transistors through a multiscale approach},
  author={Gianluca Fiori and S{\'e}bastien Leb{\`e}gue and A. Betti and Paolo Maria Michetti and M.Klintenberg and O.Eriksson and Giuseppe Iannaccone},
  journal={Physical Review B},
  year={2010},
  volume={82},
  pages={153404}
}
In this work, we present a performance analysis of field-effect transistors (FETs) based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semihydrogenated graphene (i.e., graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor sp(3) tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on… 

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