Simulation of gate lag and current collapse in GaN heterojunction field effect transistors

@article{Braga2004SimulationOG,
  title={Simulation of gate lag and current collapse in GaN heterojunction field effect transistors},
  author={Nelson Braga and Rimvydas Vidas Mickevicius and M. S. Shur and Remis Gaska and M. Asif Khan and G. Simin},
  journal={IEEE Compound Semiconductor Integrated Circuit Symposium, 2004.},
  year={2004},
  pages={287-290}
}
We present results from numerical simulations of the current collapse phenomenon in GaN heterostructure field effect transistors. Gate lag simulation results show that current collapse can be explained by an enhanced trapping under the gate edges. Hot electrons play an instrumental role in the collapse mechanism. The simulation results also linked collapse with electrons spreading into the substrate, and confirmed that better electron localization, as in a double heterostructure field effect… CONTINUE READING