• Mathematics
  • Published 1994

Simulation of a Nonlinear GaAs MESFET Model for use in the Design of Nonlinear Microwave Circuits

@inproceedings{Tuko1994SimulationOA,
  title={Simulation of a Nonlinear GaAs MESFET Model for use in the Design of Nonlinear Microwave Circuits},
  author={M. A. Tuko},
  year={1994}
}
A computer program has been developed that performs a large-signal simulation of a GaAs Metal-Semiconductor-Field-Effect-Transistor (MESFET) using the Curtice-Ettenberg model [1]. The model is then used to design non-linear microwave circuits such as frequency multipliers and power amplifiers. The simulation employs a two-stage numerical approximation. The so called "multiple reflection" method, which is a special kind of "harmonic balance" technique, is used between the FET and the linear… CONTINUE READING

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References

Publications referenced by this paper.
SHOWING 1-3 OF 3 REFERENCES

Ettenberg, "A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers

M.W.R. Curtice
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