# Simulation of a Nonlinear GaAs MESFET Model for use in the Design of Nonlinear Microwave Circuits

@inproceedings{Tuko1994SimulationOA, title={Simulation of a Nonlinear GaAs MESFET Model for use in the Design of Nonlinear Microwave Circuits}, author={M. A. Tuko}, year={1994} }

A computer program has been developed that performs a large-signal simulation of a GaAs Metal-Semiconductor-Field-Effect-Transistor (MESFET) using the Curtice-Ettenberg model [1]. The model is then used to design non-linear microwave circuits such as frequency multipliers and power amplifiers. The simulation employs a two-stage numerical approximation. The so called "multiple reflection" method, which is a special kind of "harmonic balance" technique, is used between the FET and the linear… CONTINUE READING