Simulation of Single Particle Displacement Damage in Silicon–Part II: Generation and Long-Time Relaxation of Damage Structure

@article{Jay2017SimulationOS,
  title={Simulation of Single Particle Displacement Damage in Silicon–Part II: Generation and Long-Time Relaxation of Damage Structure},
  author={Antoine Jay and M{\'e}lanie Raine and Nicolas Richard and Normand Mousseau and Vincent Goiffon and Anne H{\'e}meryck and Pierre Magnan},
  journal={IEEE Transactions on Nuclear Science},
  year={2017},
  volume={64},
  pages={141-148}
}
A statistical study of displacement cascades induced by silicon Primary Knock-on Atoms (PKA) in bulk silicon is performed by running a large number of molecular dynamics (MD) simulations. The choice of the PKA species and energy varying from 1 to 100 keV comes from a previous particle-matter simulation [1]. The electronic stopping power missing in standard MD simulations is here taken into account using the Two Temperature Model (TTM). This prevents from overestimating the number of created… CONTINUE READING

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