Simulation of Pores Sealing During Homoepitaxy on Si(111) Surface

@inproceedings{Neizvestny2000SimulationOP,
  title={Simulation of Pores Sealing During Homoepitaxy on Si(111) Surface},
  author={Igor G. Neizvestny and Nataliya L. Shwartz and Z.Sh. Yanovitskaja and Alexej V. Zverev},
  year={2000}
}
Abstract : Simulation of homoepitaxy process on porous Si(111) using 3D Monte Carlo model was carried out to give estimation of necessary dose for complete pores overgrowth of different sizes porosity and various deposition flux intensities for given temperature. 

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