Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model

Abstract

An anomalous output characteristics is observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not present in drift-diffusion simulations and its occurance in measurements is questionable. An explanation of the cause of this effect is given, and a solution is proposed by modifying the hydrodynamic transport model.

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Cite this paper

@inproceedings{Gritsch2002SimulationOP, title={Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model}, author={Markus Gritsch and Hans Kosina and Tibor Grasser and Siegfried Selberherr}, year={2002} }