Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands

@inproceedings{Pham2007SimulationOM,
  title={Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands},
  author={Anh-Tuan Pham and C. Jungemann and Bernd Meinerzhagen},
  year={2007}
}
Magnetotransport of holes in Si inversion layers of 1D MOS capacitors on arbitrarily oriented substrates is simulated. The \( 6 x 6 \vec k \cdot \vec p \) Schrodinger equation is solved self-consistently with the confining electrostatic potential to calculate the 2D hole gas subband structure. The transport of holes within the channel is investigated by solving the stationary Boltzmann equation (BTE) for a small lateral driving electric field. The distribution function is either expressed as a… CONTINUE READING
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