Simulation of Electron Transport in High-Mobility MOSFETs: Density of States Bottleneck and Source Starvation

@article{Fischetti2007SimulationOE,
  title={Simulation of Electron Transport in High-Mobility MOSFETs: Density of States Bottleneck and Source Starvation},
  author={M. V. Fischetti and L. Wangt and B. Yut and Ch. Sachs and P. M. Asbeckt and Y. Taurt and M. Rodwell},
  journal={2007 IEEE International Electron Devices Meeting},
  year={2007},
  pages={109-112}
}
20 nm InGaAs-based MOSFETs are studied using dc and transient Monte Carlo simulations and self-consistent Schrodinger-Poisson solutions accounting for nonparabolic corrections. The latter simulations show that nonparabolicity can boost the carrier concentration in the InGaAs channel by up to 35% with respect to calculations based on parabolic models, while Monte Carlo simulations show that an optimization of the source, channel, and source/channel regions can significantly improve the… CONTINUE READING
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