Simulation of 50-nm Gate Graphene Nanoribbon Transistors

@inproceedings{Bondja2016SimulationO5,
  title={Simulation of 50-nm Gate Graphene Nanoribbon Transistors},
  author={Cedric Nanmeni Bondja and Zhikui Geng and Ralf Granzner and J. Pezoldt and Frank Schwierz},
  year={2016}
}
An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor) is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency f T and the maximum frequency of oscillation f max of GNR MOSFETs… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-10 OF 50 REFERENCES

Microwave Transistors : State of the Art in the 1980 s , 1990 s , 2000 s , and 2010 s

  • F. Schwierz
  • 2015

Microwave Transistors: State of the Art in the 1980s, 1990s, 2000s, and 2010s. A Compilation of 1500 Top References; TU Ilmenau: Ilmenau, Germany, 2015; unpublished

  • F. Schwierz
  • 2015

Similar Papers

Loading similar papers…