Corpus ID: 14056246

Simulation and Analysis of Gate Engineered Triple Metal Double Gate (TM-DG) MOSFET for Diminished Short Channel Effects

@inproceedings{Gupta2012SimulationAA,
  title={Simulation and Analysis of Gate Engineered Triple Metal Double Gate (TM-DG) MOSFET for Diminished Short Channel Effects},
  author={Santosh Kumar Gupta and Achinta Baidya and Srimanta Baishya},
  year={2012}
}
A triple metal double gate (TM-DG) MOSFET with high-k dielectrics has been proposed to overcome the short channel effects. We are using top and bottom metal gates with different work functions to screen the effect of drain (DIBL effect). It has been found that this is effective in reducing the short channel effects. The metal gates have been used to remove the poly silicon depletion of conventional double gate (DG) MOSFET due to aggressive scaling to sub 100 nm regimes. It has been observed… CONTINUE READING

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