Simulation Study of FIBL in Ge MOSFETs with High-k Gate Dielectrics

@article{Tan2005SimulationSO,
  title={Simulation Study of FIBL in Ge MOSFETs with High-k Gate Dielectrics},
  author={Yoke Ping Tan and M. James and Qingchun Jon Zhang and Nan Wu and Chunxiang Zhu},
  journal={2005 IEEE Conference on Electron Devices and Solid-State Circuits},
  year={2005},
  pages={111-113}
}
The effect of fringe induced barrier lowering (FIBL) in Ge MOSFETs with high-k gate dielectrics is simulated with comparison to those of Si counterparts. It is observed that both Ge and Si devices undergo FIBL, which is dependent on gate length and permittivity of gate dielectrics. Germanium MOSFETs show less vulnerable FIBL effects than silicon counterparts in terms of DIBL and sub-threshold swing due to a higher permittivity in Ge. It is concluded that although FIBL cannot be eliminated, it… CONTINUE READING

From This Paper

Figures, tables, results, connections, and topics extracted from this paper.
0 Extracted Citations
8 Extracted References
Similar Papers

Referenced Papers

Publications referenced by this paper.
Showing 1-8 of 8 references

A TaN-HfO2-Ge pMOSFET with Novel SiH4 Surface Passivation

  • Nan Wu, Qingchun Zhang, +7 authors D. L. Kwong
  • IEEE Electron Device Letters, Vol. 25, No. 9, pp…
  • 2004
2 Excerpts

Antoniadis , " Ge MOS characteristics with CVD HfO 2 gate dielectrics and TaN gate electrode

  • A.
  • Proc . VLSI Symp . Tech . Dig .
  • 2001

High-K Gate Dielectrics: Current Status and Material Properties Considerations

  • G. D. Wilk, R. M. Wallace, J. M. Anthony
  • Journal ofApplied Physics, Vol. 89, No. 10, pp…
  • 2001
2 Excerpts

New Stack Gate Insulator Structure Reduce FIBL Effect Obviously

  • Chen-Hsiao Lai, Ling-Chang Hu, Hai Ming Lee, Long-Je Do, Ya-Chin King
  • Proc. of International Symposium on VLSI…
  • 2001
2 Excerpts

The Impact of high-K Gate Dielectrics and Metal Gate Electrodes on sub-100 nm MOSFETs

  • B. Cheng, M. Cao, +7 authors J.C.S. Woo
  • IEEE Trans. on Electron Devices, Vol. 46, pp…
  • 1999
2 Excerpts

Fringing-Induced Barrier Lowering (FIBL) in Sub-lOOnm MOSFETs with High-K Gate Dielectrics

  • G.C.-F. Yeap, S. Krishnan, M. R. Lin
  • IEE Electronics Letters, Vol. 43, No. 11, pp…
  • 1998
2 Excerpts

Similar Papers

Loading similar papers…