Simulating quantum transport in nanoscale MOSFETs: Ballistic hole transport, subband engineering and boundary conditions

Abstract

We present a modeling scheme for simulating ballistic hole transport in thin-body fully depleted silicon-on-insulator pMOSFETs. The scheme includes all of the quantum effects associated with hole confinement and also accounts for valence band nonparabolicity approximately. This simulator is used to examine the effects of hole quantization on device… (More)

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