Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response.

@article{Geis2009SiliconWI,
  title={Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response.},
  author={M. W. Geis and Steven J. Spector and Matthew Edward Grein and Jung Uk Yoon and Donna M. Lennon and Theodore Lyszczarz},
  journal={Optics express},
  year={2009},
  volume={17 7},
  pages={5193-204}
}
SOI CMOS compatible Si waveguide photodetectors are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. Photodiodes have a bandwidth of >35 GHz, an internal quantum efficiency of 0.5 to 10 AW-1, and leakage currents of 0.5 nA to 0.5 microA. Phototransistors have an optical response of 50 AW-1 with a bandwidth of 0.2 GHz. These properties are related to carrier mobilities in the implanted Si waveguide. These detectors exhibit low optical absorption requiring lengths from <0.3… CONTINUE READING
Highly Cited
This paper has 87 citations. REVIEW CITATIONS

From This Paper

Topics from this paper.

Citations

Publications citing this paper.
Showing 1-10 of 47 extracted citations

87 Citations

01020'10'12'14'16'18
Citations per Year
Semantic Scholar estimates that this publication has 87 citations based on the available data.

See our FAQ for additional information.

Similar Papers

Loading similar papers…