• Corpus ID: 17025682

Silicon on sapphire

@inproceedings{Carey1981SiliconOS,
  title={Silicon on sapphire},
  author={Kent W. Carey},
  year={1981}
}
Silicon-on-Sapphire (SOS) is one of the silicon-on-insulator (SOI) semiconductor manufacturing technologies. In fact, SOS is the first of the SOI technologies. SOS is formed by depositing a thin layer of silicon onto a sapphire wafer at high temperature. Its main advantage for electronic circuits is the highly insulating sapphire substrate. The benefit of the insulating substrate is very low parasitic capacitance, which provides increased speed, lower power consumption, better linearity, and… 

Figures from this paper

Integrated DC-DC boost converters using CMOS silicon on Sapphire Technology
Mohammad, Imaduddin. M.S.E.C.E., Purdue University, May 2014. Integrated DC-DC Boost Converters using CMOS Silicon on Sapphire Technology. Major Professor: Saeed Mohammadi. With the recent
Integrating High Temperature Superconducting Yttrium Barium Copper Oxide with Silicon-on-Sapphire Electronics
High temperature superconductors (HTSC) offer near zero loss performance when operated below the critical temperature which – at this point in the evolution of HTSCs – ranges from 77K to well over
Silicon-on-sapphire CMOS and opportunities in niche markets: Old wine in a new bottle
  • A. Andreou
  • Engineering
    2008 IEEE International SOI Conference
  • 2008
Silicon-on-sapphire CMOS has always been an intriguing technology with prospects for applications in niche markets. In this paper, we summarize our work with SOS CMOS technology over the last two
Comparative analysis of switching performance of transistors in SOS process for RF applications
TLDR
It can be concluded that for the same W/L ratio, NL and IN transistors in the FC process give higher quality factor and also higher Con over Coff, while in the GC process, IN devices perform best.
Emerging heterogeneous integrated photonic platforms on silicon
Abstract Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform.
Mid-infrared silicon photonic waveguides and devices [Invited]
TLDR
Novel device architectures and improved fabrication techniques have paved a viable way for realizing low-cost, high-density, multi-function integrated devices in the MIR, which is expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.
A synchronous buck-boost converter on a Silicon-On-Sapphire 0.5µm process
TLDR
This paper presents the design of a synchronous non-inverting buck-boost DC-DC converter on a Silicon-on-Sapphire (SOS) 0.5μm process that uses significantly less die area than similar converters on standard CMOS processes.
Silicon photonic devices for mid-infrared applications
Abstract The mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently,
Fabrication and Characterization of Si-on-SiC Hybrid Substrates
In this thesis, we are making a new approach to fabricate silicon on insulator (SOI). By replacing the buried silicon dioxide and the silicon handling wafer with silicon carbide through hydrophilic
Comparison of SOS MOSFET's Equivalent Circuit Parameters Extracted From $LCR$ Meter and VNA Measurement
In this paper, we critically compare two techniques for the parametrization of silicon-on-sapphire MOSFETs' high-frequency small-signal equivalent circuit and discuss the scalability of
...
1
2
3
...

References

SHOWING 1-5 OF 5 REFERENCES
Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation Techniques
We demonstrate that the crystalline quality of Si layers grown on sapphire substrate (SOS) by the CVD method can be greatly improved through the use of implantation of Si ions and subsequent thermal
Silicon-on-Sapphire Substrates Overcome MOS Limitations
  • Silicon-on-Sapphire Substrates Overcome MOS Limitations
  • 1972
Electrical Engineer, an oral history conducted in 1975 by
  • Electrical Engineer, an oral history conducted in 1975 by