Silicon-on-insulator asymmetric optical switch based on total internal reflection

@article{Zhao1997SilicononinsulatorAO,
  title={Silicon-on-insulator asymmetric optical switch based on total internal reflection},
  author={Ce Zhou Zhao and Ai Hua Chen and E. K. Liu and G. Li},
  journal={IEEE Photonics Technology Letters},
  year={1997},
  volume={9},
  pages={1113-1115}
}
Based on the large cross-section single-mode rib waveguide condition, total internal reflection (TIR) and the plasma dispersion effect, a silicon-on-insulator (SOI) asymmetric optical waveguide switch with transverse injection structure has been proposed and fabricated, in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. The device performance is measured at a wavelength of 1.3 /spl mu/m. It shows that the extinction ratio and insertion loss are… CONTINUE READING
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