Silicon nitride-on-silicon bar resonator using internal electrostatic transduction

@article{Bhave2005SiliconNB,
  title={Silicon nitride-on-silicon bar resonator using internal electrostatic transduction},
  author={S. A. Bhave and R. T. Howe},
  journal={The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.},
  year={2005},
  volume={2},
  pages={2139-2142 Vol. 2}
}
This paper demonstrates an electrostatic transducer for lateral-mode bar resonators in which a high dielectric constant (high-K) thin film is sandwiched between polysilicon electrodes and the top surface of the resonator. This internal electrostatic transducer has several advantages over both air-gap electrostatic and piezoelectric transduction, including lower motional impedance (R/sub x/), compatibility with advanced scaled CMOS device technology, and extended dynamic range. The resonators… CONTINUE READING
Highly Cited
This paper has 28 citations. REVIEW CITATIONS
21 Citations
11 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 21 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 11 references

Internal Electrostatic Transduction for Bulk-Mode MEMS Resonators

  • S. A. Bhave, R. T. Howe
  • Hilton Head 2004, pp. 59-60.
  • 2004
1 Excerpt

A kinetic model for step coverage by atomic-layer deposition in narrow trenches

  • R. G. Gordon
  • Chemical Vapor Deposition, 9 (2003), pp. 73-78…
  • 2003
1 Excerpt

Micromechanical Bulk Acoustic Wave Resonator

  • T. Mattila
  • Ultrasonics Symposium, 2002, pp. 945-948.
  • 2002
3 Excerpts

Mechanical Filters in Electronics

  • R. A. Johnson
  • New York, NY, Wiley, 1983.
  • 1983
1 Excerpt

Similar Papers

Loading similar papers…