Silicon nitride-on-silicon bar resonator using internal electrostatic transduction

  title={Silicon nitride-on-silicon bar resonator using internal electrostatic transduction},
  author={S. A. Bhave and R. T. Howe},
  journal={The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.},
  pages={2139-2142 Vol. 2}
This paper demonstrates an electrostatic transducer for lateral-mode bar resonators in which a high dielectric constant (high-K) thin film is sandwiched between polysilicon electrodes and the top surface of the resonator. This internal electrostatic transducer has several advantages over both air-gap electrostatic and piezoelectric transduction, including lower motional impedance (R/sub x/), compatibility with advanced scaled CMOS device technology, and extended dynamic range. The resonators… CONTINUE READING
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Internal Electrostatic Transduction for Bulk-Mode MEMS Resonators

  • S. A. Bhave, R. T. Howe
  • Hilton Head 2004, pp. 59-60.
  • 2004
1 Excerpt

A kinetic model for step coverage by atomic-layer deposition in narrow trenches

  • R. G. Gordon
  • Chemical Vapor Deposition, 9 (2003), pp. 73-78…
  • 2003
1 Excerpt

Micromechanical Bulk Acoustic Wave Resonator

  • T. Mattila
  • Ultrasonics Symposium, 2002, pp. 945-948.
  • 2002
3 Excerpts

Mechanical Filters in Electronics

  • R. A. Johnson
  • New York, NY, Wiley, 1983.
  • 1983
1 Excerpt

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