Silicon nanowire transistors with a channel width of 4 nm fabricated by atomic force microscope nanolithography.

The emergence of an ultrasensitive sensor technology based on silicon nanowires requires both the fabrication of nanoscale diameter wires and the integration with microelectronic processes. Here we demonstrate an atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect… CONTINUE READING