Silicon light emitting diodes emitting over the 1 . 2 – 1 . 4 m wavelength region in the extended optical communication band

@inproceedings{Loureno2008SiliconLE,
  title={Silicon light emitting diodes emitting over the 1 . 2 – 1 . 4 m wavelength region in the extended optical communication band},
  author={Manon A Lourenço and Russell M. Gwilliam and Kevin P. Homewood},
  year={2008}
}
Here, we demonstrate bulk silicon light emitting diodes operating over the 1.2–1.35 m range. This is achieved by the implantation of the rare earth thulium, incorporated in the trivalent Tm3+ state, into silicon p-n junctions. Light emitting diodes operating under forward bias have been obtained by codoping of boron to reduce the thermal quenching. Seven… CONTINUE READING