Silicon high-resistivity-substrate millimeter-wave technology

  title={Silicon high-resistivity-substrate millimeter-wave technology},
  author={J. Buechler and Erich Kasper and P. Russer and K. M. Strohm},
  journal={IEEE Transactions on Electron Devices},
The application of molecular beam epitaxy (MBE) and X-ray lithography for the fabrication of monolithic integrated millimeter-wave devices on high-resistivity silicon has been investigated. Process compatibility and the retention of high-resistivity characteristics were measured using the spreading resistance method and Hall measurements after various process steps. Microstrip resonators of ring and linear geometry were fabricated on 10 000 Ω.cm silicon substrates. For linear microstrip… CONTINUE READING
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