Silicon high-resistivity-substrate millimeter-wave technology

@article{Buechler1986SiliconHM,
  title={Silicon high-resistivity-substrate millimeter-wave technology},
  author={J. Buechler and Erich Kasper and P. Russer and K. M. Strohm},
  journal={IEEE Transactions on Electron Devices},
  year={1986},
  volume={33},
  pages={2047-2052}
}
The application of molecular beam epitaxy (MBE) and X-ray lithography for the fabrication of monolithic integrated millimeter-wave devices on high-resistivity silicon has been investigated. Process compatibility and the retention of high-resistivity characteristics were measured using the spreading resistance method and Hall measurements after various process steps. Microstrip resonators of ring and linear geometry were fabricated on 10 000 Ω.cm silicon substrates. For linear microstrip… CONTINUE READING
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References

Publications referenced by this paper.
Showing 1-7 of 7 references

Stress compensated Si-membrane masks for X-ray lithography with synchrotron radiation,

  • K. M. Strohm, J. Hersener, H. J. Herzog
  • in Eurocon’
  • 1986

High speed integrated circuit using silicon molecular beam epitaxy ( SI - MBE )

  • J. Hersener, H. J. Herzog
  • J . Electrochem . Soc .
  • 1985

A silicon technology for millimeter - wave monolithic circuits

  • A. Rosen
  • RCA Rev .
  • 1984

Microstrip IMPATT-diode oscillator €or 100 GHz,

  • B. Morgan
  • Electron. Lett., vol. 17,
  • 1981

Silicon as a millimeter-wave monolithically integrated substrate-A new look,

  • A. Rosen
  • RCA Rev. vol
  • 1981

Millimeter-wave microstrip oscillators,

  • M. V. Schneider
  • IEEE Trans. Microwave Theory Tech.,
  • 1974

Optimization of diode structures for monolithic integrated microwave circuits

  • S. D. Emmons
  • IEEE J . Solid - State Circuits

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