Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

@article{Iyer1987SilicongermaniumBH,
  title={Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy},
  author={S. Iyer and G A Patton and S Delage and Sanjay Tiwari and J Stork},
  journal={1987 International Electron Devices Meeting},
  year={1987},
  pages={874-876}
}
We report the first SiGe base heterojunction Bipolar Transistors (HBT) The devices were fabricated using Molecular Beam Epitaxy (MBE), low temperature processing and different germanium contents. The transistors demonstrate current gain and show the expected increase in collector current as a result of reduced bandgap due to Ge incorporation in the base. A 6 times increase in collector current was measured for a 1000A base device containing 12% Ge, consistent with a bandgap shrinkage in the… CONTINUE READING
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