Silicon germanium BiCMOS technology

@article{Kempf2002SiliconGB,
  title={Silicon germanium BiCMOS technology},
  author={Paul Kempf and Marco Racanelli},
  journal={24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu},
  year={2002},
  pages={3-6}
}
In the past few years, the cutoff frequency of silicon germanium bipolar transistors has nearly quadrupled for devices integrated in production BiCMOS process technology. This has enabled integration, speed and power improvements using silicon-based solutions in communications products previously served exclusively by III-V technology.