Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

@article{Johnson2004SilicongermaniumBH,
  title={Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications},
  author={J. B. Johnson and A. J. Joseph and D. Sheridan and R. M. Maladi and P. Brandt and Johan Persson and J. Andersson and A. Bjorneklett and Ulla Persson and F. Abasi and Louise Tilly},
  journal={IEEE Journal of Solid-State Circuits},
  year={2004},
  volume={39},
  pages={1605-1614}
}
This paper discusses and illustrates the key device design issues for SiGe BiCMOS HBTs suitable for wireless power amplifier (PA) applications. Experimental results addressing ruggedness, ac performance, and safe operating area for high-breakdown SiGe HBTs built in several generations of BiCMOS technology are presented. Implications of recent high-performance SiGe HBT scaling achievements for BiCMOS technologies targeting wireless PA applications are considered. Circuit results for GSM, PCS… CONTINUE READING
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