Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells

@article{Ryu2000SiliconDE,
  title={Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells},
  author={Mee-Yi Ryu and Young-Jun Yu and E. Shin and P. W. Yu and Joo In Lee and Sungkyu Yu and E. Oh and O. Nam and C. Sone and Y. Park and T. I. Kim},
  journal={Solid State Communications},
  year={2000},
  volume={116},
  pages={675-678}
}
Abstract We have studied the effects of Si doping on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N multiple quantum wells (MQWs) by photoluminescence (PL) and time-resolved PL measurements. As increasing Si doping in the barriers, the PL shows an increase of emission intensity and a blueshift of peak energy. The 10 K recombination lifetime depends strongly on the Si doping level in the InGaN barriers, decreasing from ∼80 to ∼20 ns as the doping level is increased from 2×1018 to 1×10… Expand
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SHOWING 1-10 OF 10 REFERENCES