Silicon doped diamond-like carbon films as a coating for improvement of electron field emission

@article{Evtukh2001SiliconDD,
  title={Silicon doped diamond-like carbon films as a coating for improvement of electron field emission},
  author={A. A. Evtukh and Volodymyr Litovchenko and Yu. M. Litvin and D. V. Fedin and A. G. Chakhovskoi and Thomas E. Felter},
  journal={IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586)},
  year={2001},
  pages={295-296}
}
  • A. Evtukh, V. Litovchenko, T. Felter
  • Published 12 August 2001
  • Physics, Materials Science
  • IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586)
In this work the influence of in-situ silicon doping of PECVD DLC films on their properties and emission parameters of silicon tip array coated such films have been investigated. The idea was to make easier the electron transport from silicon tip through DLC film and enhance the field emission efficiency from silicon tips coated silicon doped DLC films. 

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