Silicon carbide nanowires under external loads : An atomistic simulation study

@inproceedings{Makeev2006SiliconCN,
  title={Silicon carbide nanowires under external loads : An atomistic simulation study},
  author={Maxim A. Makeev and Deepak Srivastava and Madhu Menon},
  year={2006}
}
The nanomechanical response properties of 3C-SiC nanowires are investigated using molecular dynamics simulation with Tersoff bond-order interatomic potential. Under axial compression and tensile strain, the computed Young’s modulus and structural changes at elastic limit do not depend appreciably on the diameter of the nanowire except for the nanowire of the smallest diameter 1 nm under compression. The elastic modulus and structural failure near the elastic limit regime, for nonaxial bending… CONTINUE READING

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